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2sb1189_1238

2SB1189 / 2SB1238 Transistors Medium power transistor (-80V, -0.7A) 2SB1189 / 2SB1238 External dimensions (Units : mm) Features 1) High breakdown voltage, BVCEO=-80V, and 2SB1189 4.0 high current, IC=-0.7A. 1.0 2.5 0.5 2) Complements the 2SD1767 / 2SD1859. (1) (2) (3) Absolute maximum ratings (Ta=25°C) Parameter Symbol Limits Unit Collector-base voltage VCBO -80 V Collector-emitter voltage VCEO -80 V Emitter-base voltage VEBO -5 V Collector current IC -0.7 A ROHM : MPT3 (1) Base 0.5 (2) Collector EIAJ : SC-62 2SB1189 Collector power PC 2 W ?1 (3) Emitter dissipation 2SB1238 1 ?2 Junction temperature Tj 150 °C Storage temperature Tstg -55~+150 °C 2SB1238 ?1 When mounted on a 40?40?0.7 mm ceramic board. 2.5 ?2 Printed circuit board 1.7 mm thick, collecto

Keywords

 2sb1189 1238 Datasheet, Design, MOSFET, Power

 2sb1189 1238 RoHS, Compliant, Service, Triacs, Semiconductor

 2sb1189 1238 Database, Innovation, IC, Electricity

 

 
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