View 2sb1207 e datasheet:

Transistor 2SB1207 Silicon PNP epitaxial planer type For low-voltage output amplification Unit: mm 4.0± 0.2 Features Low collector to emitter saturation voltage VCE(sat). Optimum for high-density mounting. Allowing supply with the radial taping. Absolute Maximum Ratings (Ta=25?C) marking Parameter Symbol Ratings Unit 1 2 3 Collector to base voltage VCBO –15 V Collector to emitter voltage VCEO –10 V 1.27 1.27 Emitter to base voltage VEBO –7 V 2.54± 0.15 Peak collector current ICP –1 A 1:Emitter Collector current IC – 0.5 A 2:Collector EIAJ:SC–72 Collector power dissipation PC 300 mW 3:Base New S Type Package Junction temperature Tj 150 ?C Storage temperature Tstg –55 ~ +150 ?C Electrical Characteristics (Ta=25?C) Parameter Symbol Conditions min typ max Unit Coll