View 2sb1218a e datasheet:

Transistor 2SB1218A Silicon PNP epitaxial planer type For general amplification Unit: mm Complementary to 2SD1819A 2.1± 0.1 0.425 1.25± 0.1 0.425 Features High foward current transfer ratio hFE. 1 S-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine 3 packing. 2 Absolute Maximum Ratings (Ta=25?C) Parameter Symbol Ratings Unit Collector to base voltage VCBO –45 V 0.2± 0.1 Collector to emitter voltage VCEO –45 V Emitter to base voltage VEBO –7 V Peak collector current ICP –200 mA 1:Base 2:Emitter EIAJ:SC–70 Collector current IC –100 mA 3:Collector S-Mini Type Package Collector power dissipation PC 150 mW Marking symbol : B Junction temperature Tj 150 ?C Storage temperature Tstg –55 ~ +150 ?C