All Transistors. Datasheet

 

View 2sb1219 e datasheet:

POWER MOSFET, IGBT, IC, TRIACS DATABASE. Electronic Supply. INNOVATION CATALOG

2sb1219_e

Transistor 2SB1219, 2SB1219A Silicon PNP epitaxial planer type For general amplification Unit: mm Complementary to 2SD1820 and 2SD1820A Features 2.1± 0.1 0.425 1.25± 0.1 0.425 Large collector current IC. S-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine 1 packing. 3 Absolute Maximum Ratings (Ta=25?C) 2 Parameter Symbol Ratings Unit Collector to 2SB1219 –30 VCBO V base voltage 2SB1219A –60 Collector to 2SB1219 –25 VCEO V emitter voltage 2SB1219A –50 0.2± 0.1 Emitter to base voltage VEBO –5 V Peak collector current ICP –1 A 1:Base Collector current IC – 0.5 A 2:Emitter EIAJ:SC–70 Collector power dissipation PC 150 mW 3:Collector S-Mini Type Package Junction temperature Tj 150 ?C Marking

Keywords

 2sb1219 e Datasheet, Design, MOSFET, Power

 2sb1219 e RoHS, Compliant, Service, Triacs, Semiconductor

 2sb1219 e Database, Innovation, IC, Electricity

 

 
Back to Top

 


 
.