View 2sb1220 e datasheet:

Transistor 2SB1220 Silicon PNP epitaxial planer type For high breakdown voltage low-noise amplification Unit: mm Complementary to 2SD1821 2.1± 0.1 0.425 1.25± 0.1 0.425 High collector to emitter voltage VCEO. Low noise voltage NV. S-Mini type package, allowing downsizing of the equipment and 1 automatic insertion through the tape packing and the magazine 3 packing. 2 Absolute Maximum Ratings (Ta=25?C) Parameter Symbol Ratings Unit Collector to base voltage VCBO –150 V Collector to emitter voltage VCEO –150 V 0.2± 0.1 Emitter to base voltage VEBO –5 V Peak collector current ICP –100 mA 1:Base Collector current IC –50 mA 2:Emitter EIAJ:SC–70 3:Collector S-Mini Type Package Collector power dissipation PC 150 mW Junction temperature Tj 150 ?C Marking symbol : I S