View 2sb1221 e datasheet:

Transistor 2SB1221 Silicon PNP epitaxial planer type For general amplification Unit: mm Complementary to 2SC3941 5.0± 0.2 4.0± 0.2 Features Low collector to emitter saturation voltage VCE(sat). Allowing supply with the radial taping. 0.7± 0.1 Absolute Maximum Ratings (Ta=25?C) Parameter Symbol Ratings Unit Collector to base voltage VCBO –250 V +0.15 +0.15 0.45 –0.1 0.45 –0.1 Collector to emitter voltage VCEO –200 V 1.27 1.27 Emitter to base voltage VEBO –5 V Peak collector current ICP –100 mA Collector current IC –70 mA 1 2 3 1:Emitter 2:Collector 2.54± 0.15 Collector power dissipation PC 1 W 3:Base Junction temperature Tj 150 ?C TO–92NL Package Storage temperature Tstg –55 ~ +150 ?C Electrical Characteristics (Ta=25?C) Parameter Symbol Conditions min typ m