View 2sb1260 datasheet:

2SB1260 / 2SB1181 / 2SB1241 Transistors Power Transistor (-80V, -1A) 2SB1260 / 2SB1181 / 2SB1241 Features External dimensions (Units : mm) 1) High breakdown voltage and high 2SB1260 2SB1181 current. 2.3+0.2 6.5±0.2 -0.1 C0.5 BVCEO= -80V, IC=-1A 5.1+0.2 -0.1 0.5±0.1 4.5+0.2 -0.1 2) Good hFE linearity. 1.5+0.2 1.6±0.1 -0.1 3) Low VCE(sat). 4) Complements the 2SD1898 / 0.65±0.1 0.75 2SD1863 / 2SD1733. (1) (2) (3) 0.9 0.4+0.1 -0.05 0.55±0.1 0.4±0.1 0.5±0.1 2.3±0.2 2.3±0.2 0.4±0.1 1.0±0.2 1.5±0.1 1.5±0.1 3.0±0.2 Structure (1) (2) (3) Epitaxial planar type (1) Base (1) Base ROHM : CPT3 (2) Collector ROHM : MPT3 Abbreviated (2) Collector PNP silicon transistor EIAJ : SC-63 (3) Emitter EIAJ : SC-62 symbol: BH (3) Emitter ? 2SB1241 2.5±0.2 6.8±0.2