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View 2sb1288 e datasheet:

POWER MOSFET, IGBT, IC, TRIACS DATABASE. Electronic Supply. INNOVATION CATALOG

2sb1288_e

Transistor 2SB1288 Silicon PNP epitaxial planer type For low-frequency power amplification Unit: mm For DC-DC converter 5.0� 0.2 4.0� 0.2 For stroboscope Features Low collector to emitter saturation voltage VCE(sat). Large collector current IC. 0.7� 0.1 Allowing supply with the radial taping. Absolute Maximum Ratings (Ta=25?C) +0.15 +0.15 0.45 �0.1 0.45 �0.1 Parameter Symbol Ratings Unit 1.27 1.27 Collector to base voltage VCBO �30 V Collector to emitter voltage VCEO �20 V Emitter to base voltage VEBO �7 V 1 2 3 1:Emitter 2:Collector Peak collector current ICP �10 A 2.54� 0.15 3:Base Collector current IC �5 A TO�92NL Package Collector power dissipation PC 1 W Junction temperature Tj 150 ?C Storage temperature Tstg �55 ~ +150 ?C Electrical Characteristics (Ta

Keywords

 2sb1288 e Datasheet, Design, MOSFET, Power

 2sb1288 e RoHS, Compliant, Service, Triacs, Semiconductor

 2sb1288 e Database, Innovation, IC, Electricity

 

 
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