View 2sb1288 e datasheet:

Transistor 2SB1288 Silicon PNP epitaxial planer type For low-frequency power amplification Unit: mm For DC-DC converter 5.0± 0.2 4.0± 0.2 For stroboscope Features Low collector to emitter saturation voltage VCE(sat). Large collector current IC. 0.7± 0.1 Allowing supply with the radial taping. Absolute Maximum Ratings (Ta=25?C) +0.15 +0.15 0.45 –0.1 0.45 –0.1 Parameter Symbol Ratings Unit 1.27 1.27 Collector to base voltage VCBO –30 V Collector to emitter voltage VCEO –20 V Emitter to base voltage VEBO –7 V 1 2 3 1:Emitter 2:Collector Peak collector current ICP –10 A 2.54± 0.15 3:Base Collector current IC –5 A TO–92NL Package Collector power dissipation PC 1 W Junction temperature Tj 150 ?C Storage temperature Tstg –55 ~ +150 ?C Electrical Characteristics (Ta