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POWER MOSFET, IGBT, IC, TRIACS DATABASE. Electronic Supply. INNOVATION CATALOG

2sb1297_e

Transistor 2SB1297 Silicon PNP epitaxial planer type For low-frequency output amplification Unit: mm Complementary to 2SD1937 5.0± 0.2 4.0± 0.2 Features Extremely satisfactory linearity of the forward current transfer ratio hFE. High transition frequency fT. Makes up a complementary pair with 2SD1937, which is opti- 0.7± 0.1 mum for the pre-driver stage of a 40 to 60W output amplifier. Absolute Maximum Ratings (Ta=25?C) +0.15 +0.15 0.45 –0.1 0.45 –0.1 Parameter Symbol Ratings Unit 1.27 1.27 Collector to base voltage VCBO –120 V Collector to emitter voltage VCEO –120 V 1 2 3 1:Emitter Emitter to base voltage VEBO –5 V 2:Collector 2.54± 0.15 Peak collector current ICP –1 A 3:Base TO–92NL Package Collector current IC – 0.5 A Collector power dissipation PC 1 W Jun

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 2sb1297 e Datasheet, Design, MOSFET, Power

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