View 2sb1297 e datasheet:
POWER MOSFET, IGBT, IC, TRIACS DATABASE. Electronic Supply. INNOVATION CATALOG
Transistor 2SB1297 Silicon PNP epitaxial planer type For low-frequency output amplification Unit: mm Complementary to 2SD1937 5.0± 0.2 4.0± 0.2 Features Extremely satisfactory linearity of the forward current transfer ratio hFE. High transition frequency fT. Makes up a complementary pair with 2SD1937, which is opti- 0.7± 0.1 mum for the pre-driver stage of a 40 to 60W output amplifier. Absolute Maximum Ratings (Ta=25?C) +0.15 +0.15 0.45 0.1 0.45 0.1 Parameter Symbol Ratings Unit 1.27 1.27 Collector to base voltage VCBO 120 V Collector to emitter voltage VCEO 120 V 1 2 3 1:Emitter Emitter to base voltage VEBO 5 V 2:Collector 2.54± 0.15 Peak collector current ICP 1 A 3:Base TO92NL Package Collector current IC 0.5 A Collector power dissipation PC 1 W Jun
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2sb1297 e Datasheet, Design, MOSFET, Power
2sb1297 e RoHS, Compliant, Service, Triacs, Semiconductor
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