View 2sb642 e datasheet:

Transistor 2SB642 Silicon PNP epitaxial planer type For low-power general amplification Unit: mm 6.9± 0.1 2.5± 0.1 1.5 1.5 R0.9 1.0 Features R0.9 High foward current transfer ratio hFE. M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board. 0.85 Absolute Maximum Ratings (Ta=25?C) 0.55± 0.1 0.45± 0.05 Parameter Symbol Ratings Unit 3 2 1 Collector to base voltage VCBO –60 V Collector to emitter voltage VCEO –50 V Emitter to base voltage VEBO –7 V 2.5 2.5 Peak collector current ICP –200 mA Collector current IC –100 mA 1:Base 2:Collector EIAJ:SC–71 Collector power dissipation PC 400 mW 3:Emitter M Type Mold Package Junction temperature Tj 150 ?C Storage temperature Tstg –55 ~ +150 ?C Electrical Charac