View 2sb643 e datasheet:

Transistor 2SB643, 2SB644 Silicon PNP epitaxial planer type For low-power general amplification Unit: mm Complementary to 2SD638 and 2SD639 6.9± 0.1 2.5± 0.1 1.5 1.5 R0.9 1.0 Features R0.9 M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board. Absolute Maximum Ratings (Ta=25?C) 0.85 Parameter Symbol Ratings Unit 0.55± 0.1 0.45± 0.05 Collector to 2SB643 –30 VCBO V base voltage 2SB644 –60 3 2 1 Collector to 2SB643 –25 VCEO V emitter voltage 2SB644 –50 2.5 2.5 Emitter to base voltage VEBO –7 V Peak collector current ICP –1 A 1:Base Collector current IC – 0.5 A 2:Collector EIAJ:SC–71 3:Emitter M Type Mold Package Collector power dissipation PC 600 mW Junction temperature Tj 150 ?C Storage tempera