View 2sb819 e datasheet:

Transistor 2SB819 Silicon PNP epitaxial planer type For low-frequency output amplification Unit: mm Complementary to 2SD1051 6.9± 0.1 2.5± 0.1 1.5 1.5 R0.9 1.0 Features R0.9 High collector to emitter voltage VCEO. Large collector power dissipation PC. M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board. 0.85 0.55± 0.1 0.45± 0.05 Absolute Maximum Ratings (Ta=25?C) 3 2 1 Parameter Symbol Ratings Unit Collector to base voltage VCBO –50 V Collector to emitter voltage VCEO –40 V 2.5 2.5 Emitter to base voltage VEBO –5 V Peak collector current ICP –3 A 1:Base 2:Collector EIAJ:SC–71 Collector current IC –1.5 A 3:Emitter M Type Mold Package Collector power dissipation PC* 1 W Junction temperature Tj 150