View 2sc3998 datasheet:

Ordering number:EN2732 NPN Triple Diffused Planar Silicon Transistor 2SC3998 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions · High speed (tf=100ns typ). unit:mm · High breakdown voltage (VCBO=1500V). 2048B · High reliability (adoption of HVP process). [2SC3998] · Adoption of MBIT process. 20.0 3.3 5.0 2.0 3.4 0.6 1.2 1 : Base 1 2 3 2 : Collector 3 : Emitter 5.45 5.45 SANYO : TO-3PBL Specifications Absolute Maximum Ratings at Ta = 25?C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO 1500 V Collector-to-Emitter Voltage VCEO 800 V Emitter-to-Base Voltage VEBO 6 V Collector Current IC 25 A Collector Current (Pulse) ICP 50 A Collector Dissipation PC Tc=25?C 250 W Junction Tempe