View 2sc4409 datasheet:

2SC4409 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC4409 Power Amplifier Applications Unit: mm Power switching applications • Low collector saturation voltage: VCE (sat) = 0.5V (max) (at I = 1A) C • High speed switching time: t = 500ns (typ.) stg • Small flat package • P = 1~2 W (Mounted on ceramic substrate) C • Complementary to 2SA1681 Maximum Ratings (Ta = = 25°C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 80 V Collector-emitter voltage VCEO 50 V Emitter-base voltage VEBO 6 V Collector current IC 2 A Base current IB 0.2 A JEDEC ? Collector power dissipation PC 500 mW Collector power dissipation PC (Note) 1000 mW JEITA SC-62 Junction temperature Tj 150 °C TOSHIBA 2-5K1A Storage temperature range Tstg -