View 2sc4409 datasheet:
POWER MOSFET, IGBT, IC, TRIACS DATABASE. Electronic Supply. INNOVATION CATALOG
2SC4409 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC4409 Power Amplifier Applications Unit: mm Power switching applications Low collector saturation voltage: VCE (sat) = 0.5V (max) (at I = 1A) C High speed switching time: t = 500ns (typ.) stg Small flat package P = 1~2 W (Mounted on ceramic substrate) C Complementary to 2SA1681 Maximum Ratings
Keywords
2sc4409 Datasheet, Design, MOSFET, Power
2sc4409 RoHS, Compliant, Service, Triacs, Semiconductor
2sc4409 Database, Innovation, IC, Electricity
