All Transistors. Datasheet

 

View 2sc4410 e datasheet:

POWER MOSFET, IGBT, IC, TRIACS DATABASE. Electronic Supply. INNOVATION CATALOG

2sc4410_e

Transistor 2SC4410 Silicon NPN epitaxial planer type For UHF amplification Unit: mm 2.1± 0.1 Features 0.425 1.25± 0.1 0.425 Allowing the small current and low voltage operation. High transition frequency fT. 1 S-Mini type package, allowing downsizing of the equipment and 3 automatic insertion through the tape packing and the magazine packing. 2 Absolute Maximum Ratings (Ta=25?C) Parameter Symbol Ratings Unit Collector to base voltage VCBO 10 V 0.2± 0.1 Collector to emitter voltage VCEO 7 V Emitter to base voltage VEBO 2 V 1:Base 2:Emitter EIAJ:SC–70 Collector current IC 10 mA 3:Collector S–Mini Type Package Collector power dissipation PC 50 mW Junction temperature Tj 150 ?C Marking symbol : 2X Storage temperature Tstg –55 ~ +150 ?C Electrical Characteristics (Ta

Keywords

 2sc4410 e Datasheet, Design, MOSFET, Power

 2sc4410 e RoHS, Compliant, Service, Triacs, Semiconductor

 2sc4410 e Database, Innovation, IC, Electricity

 

 
Back to Top

 


 
.