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2sc4413

Ordering number:EN2923 NPN Epitaxial Planar Silicon Transistor 2SC4413 Low-Frequency General-Purpose Amplifier Applications Features Package Dimensions · Very small-sized package permitting the 2SC4413- unit:mm applied sets to be made small and slim. 2059B · Adoption of FBET process. [2SC4413] · High DC current gain. 0.3 0.15 · Low collector-to-emitter saturation voltage. 3 · High VEBO. · Small Cob. 0~0.1 1 2 0.3 0.6 0.65 0.65 0.9 2.0 1 : Base 2 : Emitter 3 : Collector SANYO : MCP Specifications Absolute Maximum Ratings at Ta = 25?C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO 60 V Collector-to-Emitter Voltage VCEO 50 V Emitter-to-Base Voltage VEBO 15 V Collector Current IC 100 mA Collector Current (Pulse) ICP 200 mA Bas

Keywords

 2sc4413 Datasheet, Design, MOSFET, Power

 2sc4413 RoHS, Compliant, Service, Triacs, Semiconductor

 2sc4413 Database, Innovation, IC, Electricity

 

 
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