View 2sc4414 datasheet:

Ordering number:EN3012 PNP/NPN Epitaxial Planar Silicon Transistors 2SA1683/2SC4414 Low-Frequency General-Purpose Amplifier, Low-Frequency Power Amplifier Applications Features Package Dimensions � Adoption of FBET process. unit:mm � High breakdown voltage : VCEO>80V. 2033 [2SA1683/2SC4414] B : Base C : Collector E : Emitter ( ) : 2SA1683 SANYO : SPA Specifications Absolute Maximum Ratings at Ta = 25?C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO (�)100 V Collector-to-Emitter Voltage VCEO (�)80 V Emitter-to-Base Voltage VEBO (�)5 V Collector Current IC (�)500 mA Collector Current (Pulse) ICP (�)800 mA Base Current IB (�)100 mA Collector Dissipation PC 300 mW Junction Temperature Tj 150 ?C Storage Temperature Tstg �55 to +150 ?C Elect