View 2sc4432 datasheet:
POWER MOSFET, IGBT, IC, TRIACS DATABASE. Electronic Supply. INNOVATION CATALOG
Ordering number : ENN3184A 2SC4432 NPN Epitaxial Planar Silicon Transistor 2SC4432 High-Frequency General-Purpose Amplifier Applications Features Package Dimensions • High power gain. unit : mm • High cutoff frequency. 2018B • Small Cob, Cre. [2SC4432] • Ultrasmall-sized package permitting the 2SC4432- applied sets to be made small and slim. 0.4 0.16 3 0 to 0.1 1 0.95 0.95 2 1.9 1 : Base 2.9 2 : Emitter 3 : Collector SANYO : CP Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO 40 V Collector-to-Emitter Voltage VCEO 18 V Emitter-to-Base Voltage VEBO 3 V Collector Current IC 50 mA Collector Dissipation PC 250 mW Junction Temperature Tj 150 °C Storage Temperature Tstg --55 to +150 °C
Keywords
2sc4432 Datasheet, Design, MOSFET, Power
2sc4432 RoHS, Compliant, Service, Triacs, Semiconductor
2sc4432 Database, Innovation, IC, Electricity
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