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2sc4446

Ordering number:EN3013 PNP/NPN Epitaxial Planar Silicon Transistors 2SA1687/2SC4446 Low-Frequency General-Purpose Amplifier Applications Features Package Dimensions · Very small-sized package permitting the 2SA1687/ unit:mm 2SC4446-applied sets to be made small and slim. 2059 · High VEBO. [2SA1687/2SC4446] B : Base C : Collector E : Emitter ( ) : 2SA1687 SANYO : MCP Specifications Absolute Maximum Ratings at Ta = 25?C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO (–)60 V Collector-to-Emitter Voltage VCEO (–)50 V Emitter-to-Base Voltage VEBO (–)15 V Collector Current IC (–)150 mA Collector Current (Pulse) ICP (–)300 mA Base Current IB (–)30 mA Collector Dissipation PC 150 mW Junction Temperature Tj 150 ?C Storage Temperature Tstg –55 t

Keywords

 2sc4446 Datasheet, Design, MOSFET, Power

 2sc4446 RoHS, Compliant, Service, Triacs, Semiconductor

 2sc4446 Database, Innovation, IC, Electricity

 

 
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