View 2sc4476 datasheet:
POWER MOSFET, IGBT, IC, TRIACS DATABASE. Electronic Supply. INNOVATION CATALOG
Ordering number:EN3339 NPN Triple Diffused Planar Silicon Transistor 2SC4476 1800V/10mA High-Voltage Amplifier, High-Voltage Switching Applications Applications Package Dimensions · High voltage amplifier. unit:mm · High voltage switching. 2010C · Dynamic focus. [2SC4476] 10.2 4.5 3.6 5.1 1.3 Features · High breakdown voltage (VCEO min=1800V). · Small Cob (Cob typ=1.8pF). · Wide ASO. · High reliability (Adoption of HVP process). 1.2 1 : Base 0.8 0.4 2 : Collector 1 2 3 3 : Emitter JEDEC : TO-220AB 2.55 2.55 EIAJ : SC-46 Specifications Absolute Maximum Ratings at Ta = 25?C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO 2000 V Collector-to-Emitter Voltage VCEO 1800 V Emitter-to-Base Voltage VEBO 5 V Collector Current IC 10
Keywords
2sc4476 Datasheet, Design, MOSFET, Power
2sc4476 RoHS, Compliant, Service, Triacs, Semiconductor
2sc4476 Database, Innovation, IC, Electricity
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