View 2sc4489 datasheet:

Ordering number:EN3096 PNP/NPN Epitaxial Planar Silicon Transistors 2SA1709/2SC4489 High-Voltage Switching Applications Features Package Dimensions · Adoption of FBET, MBIT processes. unit:mm · High breakdown voltage, large current capacity. 2064 · Fast switching speed. [2SA1709/2SC4489] E : Emitter C : Collector B : Base ( ) 2SA1709 SANYO : NMP Specifications Absolute Maximum Ratings at Ta = 25?C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO (–)120 V Collector-to-Emitter Voltage VCEO (–)100 V Emitter-to-Base Voltage VEBO (–)6 V Collector Current IC (–)2 A Collector Current (Pulse) ICP (–)3 A Collector Dissipation PC 1 W ?C Junction Temperature Tj 150 ?C Storage Temperature Tstg –55 to +150 Electrical Characteristics at Ta = 25?C R