View 2sc4497 datasheet:

2SC4497 TOSHIBA Transistor Silicon NPN Triple Diffused Type (PCT process) 2SC4497 High Voltage Control Applications Unit: mm • High voltage: VCBO = 300 V, VCEO = 300 V • Low saturation voltage: V = 0.5 V (max) CE (sat) • Small collector output capacitance: C = 3 pF (typ.) ob • Complementary to 2SA1721 Maximum Ratings (Ta = = 25°C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 300 V Collector-emitter voltage VCEO 300 V Emitter-base voltage VEBO 6 V Collector current IC 100 mA Base current IB 20 mA Collector power dissipation PC 200 mW Junction temperature Tj 150 °C JEDEC TO-236MOD Storage temperature range Tstg -55~150 °C JEITA SC-59 Marking TOSHIBA 2-3F1A Weight: 0.012 g (typ.) 1 2003-03-27 2SC4497 Electrical Characterist