View 2sc4502 e datasheet:
POWER MOSFET, IGBT, IC, TRIACS DATABASE. Electronic Supply. INNOVATION CATALOG
Transistor 2SC4502 Silicon NPN epitaxial planer type For mtermediate frequency amplification Unit: mm 2.5± 0.1 1.05 6.9± 0.1 ± 0.05 (1.45) 0.7 4.0 0.8 Features High transition frequency fT. Large collector power dissipation PC. 0.65 max. Allowing supply with the radial taping. +0.1 Absolute Maximum Ratings (Ta=25?C) 0.45–0.05 2.5± 0.5 2.5± 0.5 Parameter Symbol Ratings Unit 1 2 3 Collector to base voltage VCBO 50 V Collector to emitter voltage VCEO 45 V Emitter to base voltage VEBO 4 V Note: In addition to the 1:Emitter lead type shown in 2:Collector Collector current IC 50 mA the upper figure, the 3:Base Collector power dissipation PC* 1 W type as shown in MT2 Type Package the lower figure is Junction temperature Tj 150 ?C also available. Storage temperatu
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2sc4502 e Datasheet, Design, MOSFET, Power
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