View 2sc4519 datasheet:

Ordering number:EN3138 NPN Epitaxial Planar Silicon Transistors 2SC4519 High-Speed Switching Applications Features Package Dimensions · Adoption of FBET process. unit:mm · Low collector-to-emitter saturation voltage. 2018A · Fast switching speed. [2SC4519] · Small-sized package. 0.4 0.16 3 0~0.1 1 0.95 2 0.95 1.9 2.9 1 : Base 2 : Emitter 3 : Collector SANYO : CP Specifications Absolute Maximum Ratings at Ta = 25?C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO 60 V Collector-to-Emitter Voltage VCEO 45 V Emitter-to-Base Voltage VEBO 5 V Collector Current IC 500 mA Collector Current (Pulse) ICP 1 A Collector Dissipation PC 200 mW Junction Temperature Tj 150 ?C Storage Temperature Tstg –55 to +150 ?C Electrical Characteristics