View 2sc4520 datasheet:

Ordering number:EN3139 NPN Epitaxial Planar Silicon Transistors 2SC4520 High-Speed Switching Applications Features Package Dimensions · Adoption of FBET, MBIT process. unit:mm · Large current capacity. 2038A · Low collector-to-emitter saturation voltage. [2SC4520] · Fast switching speed. 4.5 1.5 · Small-sized package. 1.6 0.4 0.5 3 2 1 0.4 1.5 3.0 1 : Base 0.75 2 : Collector 3 : Emitter SANYO : PCP (Bottom view) Specifications Absolute Maximum Ratings at Ta = 25?C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO 60 V Collector-to-Emitter Voltage VCEO 45 V Emitter-to-Base Voltage VEBO 5 V Collector Current IC 1.5 A Collector Current (Pulse) ICP 3 A Collector Dissipation PC Mounted on ceramic board (250mm2? 0.8mm) 1.3 W Junction