View 2sc4539 datasheet:
POWER MOSFET, IGBT, IC, TRIACS DATABASE. Electronic Supply. INNOVATION CATALOG
2SC4539 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC4539 Power Amplifier Applications Unit: mm Power Switching Applications • Low saturation voltage: VCE (sat) = 0.5 V (max) (I C = 700 mA) • High speed switching time: t = 0.3 µs (typ.) stg • Small flat package • PC = 1.0 to 2.0 W (mounted on ceramic substrate) • Complementary to 2SA1743 Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 50 V Collector-emitter voltage VCEO 30 V Emitter-base voltage VEBO 6 V Collector current IC 1.2 A Base current IB 0.3 A JEDEC ? Collector power dissipation PC 500 mW PC JEITA SC-62 Collector power dissipation 1000 mW (Note) TOSHIBA 2-5K1A Junction temperature Tj 150 °C Weight: 0.05 g (typ.) Storage temper
Keywords
2sc4539 Datasheet, Design, MOSFET, Power
2sc4539 RoHS, Compliant, Service, Triacs, Semiconductor
2sc4539 Database, Innovation, IC, Electricity
LIST
Last Update
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050
Popular searches
irfz44n | irf3205 | irfz44n datasheet | 2n4401 | bc547 transistor | bd139 | 2n4401 datasheet