View 2sc4539 datasheet:

2SC4539 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC4539 Power Amplifier Applications Unit: mm Power Switching Applications • Low saturation voltage: VCE (sat) = 0.5 V (max) (I C = 700 mA) • High speed switching time: t = 0.3 µs (typ.) stg • Small flat package • PC = 1.0 to 2.0 W (mounted on ceramic substrate) • Complementary to 2SA1743 Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 50 V Collector-emitter voltage VCEO 30 V Emitter-base voltage VEBO 6 V Collector current IC 1.2 A Base current IB 0.3 A JEDEC ? Collector power dissipation PC 500 mW PC JEITA SC-62 Collector power dissipation 1000 mW (Note) TOSHIBA 2-5K1A Junction temperature Tj 150 °C Weight: 0.05 g (typ.) Storage temper