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View 2sc4562 e datasheet:

POWER MOSFET, IGBT, IC, TRIACS DATABASE. Electronic Supply. INNOVATION CATALOG

2sc4562_e

Transistor 2SC4562 Silicon NPN epitaxial planer type For high-frequency amplification Unit: mm Complementary to 2SA1748 2.1± 0.1 0.425 1.25± 0.1 0.425 Features High transition frequency fT. 1 Small collector output capacitance Cob. S-Mini type package, allowing downsizing of the equipment and 3 automatic insertion through the tape packing and the magazine 2 packing. Absolute Maximum Ratings (Ta=25?C) Parameter Symbol Ratings Unit Collector to base voltage VCBO 50 V 0.2± 0.1 Collector to emitter voltage VCEO 50 V Emitter to base voltage VEBO 5 V 1:Base 2:Emitter EIAJ:SC–70 Collector current IC 50 mA 3:Collector S–Mini Type Package Collector power dissipation PC 150 mW Junction temperature Tj 150 ?C Marking symbol : AM Storage temperature Tstg –55 ~ +150 ?C Ele

Keywords

 2sc4562 e Datasheet, Design, MOSFET, Power

 2sc4562 e RoHS, Compliant, Service, Triacs, Semiconductor

 2sc4562 e Database, Innovation, IC, Electricity

 

 
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