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POWER MOSFET, IGBT, IC, TRIACS DATABASE. Electronic Supply. INNOVATION CATALOG

2sc4709

Ordering number:EN3687 NPN Triple Diffused Planar Silicon Transistor 2SC4709 High-Voltage Amplifier, High-Voltage Switching Applications Features Package Dimensions · High breakdown voltage (VCEO min=2100V). unit:mm · Small Cob (Cob typ=1.3pF). 2010C · Wide ASO. [2SC4709] · High reliability (Adoption of HVP process). 10.2 4.5 3.6 5.1 1.3 1.2 1 : Base 0.8 0.4 2 : Collector 1 2 3 3 : Emitter JEDEC : TO-220AB 2.55 2.55 EIAJ : SC-46 Specifications Absolute Maximum Ratings at Ta = 25?C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO 2100 V Collector-to-Emitter Voltage VCEO 2100 V Emitter-to-Base Voltage VEBO 5 V Collector Current IC 10 mA Collector Current (Pulse) ICP 30 mA Collector Dissipation PC 1.75 W Junction Temperature Tj 1

Keywords

 2sc4709 Datasheet, Design, MOSFET, Power

 2sc4709 RoHS, Compliant, Service, Triacs, Semiconductor

 2sc4709 Database, Innovation, IC, Electricity

 

 
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