View 2sc4715 e datasheet:

Transistor 2SC4715 Silicon NPN epitaxial planer type For low-frequency high breakdown voltage amplification Unit: mm 4.0± 0.2 Features Satisfactory linearity of forward current transfer ratio hFE. High collector to emitter voltage VCEO. Small collector output capacitance Cob. marking Absolute Maximum Ratings (Ta=25?C) 1 2 3 Parameter Symbol Ratings Unit Collector to base voltage VCBO 150 V 1.27 1.27 Collector to emitter voltage VCEO 150 V 2.54± 0.15 Emitter to base voltage VEBO 5 V Peak collector current ICP 100 mA 1:Emitter Collector current IC 50 mA 2:Collector EIAJ:SC–72 Collector power dissipation PC 300 mW 3:Base New S Type Package Junction temperature Tj 150 ?C Storage temperature Tstg –55 ~ +150 ?C Electrical Characteristics (Ta=25?C) Parameter Symbol Con