View 2sc4736 datasheet:

Ordering number:EN3975 NPN Epitaxial Planar Silicon Transistor 2SC4736 High hFE, Low-Frequency General-Purpose Amplifier Applications Features Package Dimensions · Large current (IC=2A). unit:mm · Adoption of MBIT process. 2084B · High DC current gain (hFE=800 to 3200). [2SC4736] · Low collector-to-emitter saturation voltage 4.5 1.9 2.6 (VCE(sat)? 0.5V). 10.5 1.2 1.4 · High emitter-to-base voltage (VEBO? 15V). · Large power type such as PC=1.5W when used without heatsink. · It is possible to make appliances more compact because its height on board is 9.5mm. 1.2 0.5 · Effective in automatic inserting and counting stocked 1.6 0.5 amount because of being provided for radial taping. 1 2 3 1 : Emitter 2 : Collector 3 : Base 2.5 2.5 SANYO : FLP Specificati