View 2sc4747 datasheet:
POWER MOSFET, IGBT, IC, TRIACS DATABASE. Electronic Supply. INNOVATION CATALOG
2SC4747 Silicon NPN Triple Diffused Application Character display horizontal deflection output Feature • High breakdown voltage VCBO = 1500 V • High speed switching tf ? 0.3 µs Outline TO-3PFM 1. Base 2. Collector 3. Emitter 1 2 3 2SC4747 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Collector to base voltage VCBO 1500 V Collector to emitter voltage VCEO 800 V Emitter to base voltage VEBO 6V Collector current IC 10 A Collector surge current IC(surge) 20 A Collector power dissipation PC*1 50 W Junction temperature Tj 150 °C Storage temperature Tstg –55 to +150 °C Note: 1. Value at TC = 25°C. Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions Collector to emitter breakdown V(BR)CEO 800 — — V IC = 10 mA, RBE =
Keywords
2sc4747 Datasheet, Design, MOSFET, Power
2sc4747 RoHS, Compliant, Service, Triacs, Semiconductor
2sc4747 Database, Innovation, IC, Electricity
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