View 2sc4755 e datasheet:

Transistor 2SC4755 Silicon NPN epitaxial planer type For high speed switching Unit: mm 2.1± 0.1 0.425 1.25± 0.1 0.425 Features High-speed switching. 1 Low collector to emitter saturation voltage VCE(sat). S-Mini type package, allowing downsizing of the equipment and 3 automatic insertion through the tape packing and the magazine 2 packing. Absolute Maximum Ratings (Ta=25?C) Parameter Symbol Ratings Unit Collector to base voltage VCBO 25 V 0.2± 0.1 Collector to emitter voltage VCES 20 V Emitter to base voltage VEBO 5 V 1:Base 2:Emitter EIAJ:SC–70 Peak collector current ICP 300 mA 3:Collector S–Mini Type Package Collector current IC 200 mA Collector power dissipation PC 150 mW Marking symbol : DV Junction temperature Tj 150 ?C Storage temperature Tstg –55 ~ +150