View 2sc4767 e datasheet:

Transistor 2SC4767 Silicon NPN epitaxial planer type For high-frequency power amplification Unit: mm 5.0± 0.2 4.0± 0.2 Features High transition frequency fT. Output of 0.6W is obtained in the VHF band (f=175MHz). 0.7± 0.1 Absolute Maximum Ratings (Ta=25?C) Parameter Symbol Ratings Unit +0.15 +0.15 Collector to base voltage VCBO 36 V 0.45 –0.1 0.45 –0.1 1.27 1.27 Collector to emitter voltage VCEO 16 V Emitter to base voltage VEBO 3 V Peak collector current ICP 0.5 A 1:Emitter 1 2 3 Collector current IC 0.3 A 2:Collector 2.54± 0.15 3:Base Collector power dissipation PC 1 W TO–92NL Package Junction temperature Tj 150 ?C Storage temperature Tstg –55 ~ +150 ?C Electrical Characteristics (Ta=25?C) Parameter Symbol Conditions min typ max Unit Collector cutoff current