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View 2sc4767 e datasheet:

POWER MOSFET, IGBT, IC, TRIACS DATABASE. Electronic Supply. INNOVATION CATALOG

2sc4767_e

Transistor 2SC4767 Silicon NPN epitaxial planer type For high-frequency power amplification Unit: mm 5.0 0.2 4.0 0.2 Features High transition frequency fT. Output of 0.6W is obtained in the VHF band (f=175MHz). 0.7 0.1 Absolute Maximum Ratings (Ta=25?C) Parameter Symbol Ratings Unit +0.15 +0.15 Collector to base voltage VCBO 36 V 0.45 0.1 0.45 0.1 1.27 1.27 Collector to emitter

Keywords

 2sc4767 e Datasheet, Design, MOSFET, Power

 2sc4767 e RoHS, Compliant, Service, Triacs, Semiconductor

 2sc4767 e Database, Innovation, IC, Electricity

 

 
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