View 2sc4782 e datasheet:

Transistor 2SC4782 Silicon NPN epitaxial planer type For high speed switching Unit: mm +0.2 2.8 –0.3 +0.25 Features 0.65± 0.15 1.5 –0.05 0.65± 0.15 High-speed switching. Low collector to emitter saturation voltage VCE(sat). 1 Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine 3 packing. 2 Absolute Maximum Ratings (Ta=25?C) 0.1 to 0.3 Parameter Symbol Ratings Unit 0.4± 0.2 Collector to base voltage VCBO 25 V Collector to emitter voltage VCES 20 V Emitter to base voltage VEBO 5 V 1:Base JEDEC:TO–236 2:Emitter EIAJ:SC–59 Peak collector current ICP 300 mA 3:Collector Mini Type Package Collector current IC 200 mA Collector power dissipation PC 200 mW Marking symbol : DV Junction temperature Tj