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2sc4787_e

Transistor 2SC4787 Silicon NPN epitaxial planer type For intermediate frequency amplification Unit: mm 6.9± 0.1 1.05 2.5± 0.1 ± 0.05 (1.45) 0.7 4.0 0.8 Features High transition frequency fT. Satisfactory linearity of forward current transfer ratio hFE. 0.65 max. Allowing supply with the radial taping. +0.1 0.45–0.05 2.5± 0.5 2.5± 0.5 Absolute Maximum Ratings (Ta=25?C) 1 2 3 Parameter Symbol Ratings Unit Collector to base voltage VCBO 45 V Collector to emitter voltage VCEO 35 V Note: In addition to the 1:Emitter Emitter to base voltage VEBO 4 V lead type shown in 2:Collector the upper figure, the 3:Base Collector current IC 50 mA type as shown in MT1 Type Package the lower figure is Collector power dissipation PC 600 mW also available. Junction temperature Tj

Keywords

 2sc4787 e Datasheet, Design, MOSFET, Power

 2sc4787 e RoHS, Compliant, Service, Triacs, Semiconductor

 2sc4787 e Database, Innovation, IC, Electricity

 

 
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