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View 2sc4805 e datasheet:

POWER MOSFET, IGBT, IC, TRIACS DATABASE. Electronic Supply. INNOVATION CATALOG

2sc4805_e

Transistor 2SC4805 Silicon NPN epitaxial planer type For 2GHz band low-noise amplification Unit: mm 2.1± 0.1 0.425 1.25± 0.1 0.425 Features High transition frequency fT. 1 S-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine 3 packing. 2 Absolute Maximum Ratings (Ta=25?C) Parameter Symbol Ratings Unit 0.2± 0.1 Collector to base voltage VCBO 15 V Collector to emitter voltage VCEO 10 V Emitter to base voltage VEBO 2 V 1:Base 2:Emitter EIAJ:SC–70 Collector current IC 65 mA 3:Collector S–Mini Type Package Collector power dissipation PC 150 mW Junction temperature Tj 150 ?C Marking symbol : 3S Storage temperature Tstg –55 ~+150 ?C Electrical Characteristics (Ta=25?C) Parameter Symbol Conditions

Keywords

 2sc4805 e Datasheet, Design, MOSFET, Power

 2sc4805 e RoHS, Compliant, Service, Triacs, Semiconductor

 2sc4805 e Database, Innovation, IC, Electricity

 

 
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