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View 2sc4809 e datasheet:

POWER MOSFET, IGBT, IC, TRIACS DATABASE. Electronic Supply. INNOVATION CATALOG

2sc4809_e

Transistor 2SC4809 Silicon NPN epitaxial planer type For high-frequency amplification/oscillation/mixing Unit: mm 1.6± 0.15 0.4 0.8± 0.1 0.4 Features High transition frequency fT. 1 Small collector output capacitance Cob and common base reverse transfer capacitance Crb. 3 SS-Mini type package, allowing downsizing of the equipment 2 and automatic insertion through the tape packing. Absolute Maximum Ratings (Ta=25?C) 0.2± 0.1 Parameter Symbol Ratings Unit Collector to base voltage VCBO 15 V Collector to emitter voltage VCEO 10 V Emitter to base voltage VEBO 3 V 1:Base 2:Emitter EIAJ:SC–75 Collector current IC 50 mA 3:Collector SS–Mini Type Package Collector power dissipation PC 125 mW Junction temperature Tj 125 ?C Marking symbol : 1S Storage temperature Tstg –55

Keywords

 2sc4809 e Datasheet, Design, MOSFET, Power

 2sc4809 e RoHS, Compliant, Service, Triacs, Semiconductor

 2sc4809 e Database, Innovation, IC, Electricity

 

 
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