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View 2sc4835 e datasheet:

POWER MOSFET, IGBT, IC, TRIACS DATABASE. Electronic Supply. INNOVATION CATALOG

2sc4835_e

Transistor 2SC4835 Silicon NPN epitaxial planer type For UHF band low-noise amplification Unit: mm 2.1± 0.1 0.425 1.25± 0.1 0.425 Features Low noise figure NF. 1 High gain. High transition frequency fT. 3 S-Mini type package, allowing downsizing of the equipment and 2 automatic insertion through the tape packing and the magazine packing. Absolute Maximum Ratings (Ta=25?C) 0.2± 0.1 Parameter Symbol Ratings Unit Collector to base voltage VCBO 15 V Collector to emitter voltage VCEO 10 V 1:Base Emitter to base voltage VEBO 2 V 2:Emitter EIAJ:SC–70 3:Collector S–Mini Type Package Collector current IC 80 mA Collector power dissipation PC 150 mW Marking symbol : 3M Junction temperature Tj 150 ?C Storage temperature Tstg –55 ~ +150 ?C Electrical Characteristics (Ta=25

Keywords

 2sc4835 e Datasheet, Design, MOSFET, Power

 2sc4835 e RoHS, Compliant, Service, Triacs, Semiconductor

 2sc4835 e Database, Innovation, IC, Electricity

 

 
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