View 2sc4910 datasheet:
POWER MOSFET, IGBT, IC, TRIACS DATABASE. Electronic Supply. INNOVATION CATALOG
Ordering number:EN4411 NPN Epitaxial Planar Silicon Transistor 2SC4910 VHF-Band Power Amplifier Applications Features Package Dimensions · On-chip emitter ballast resistors. unit:mm 2084B [2SC4910] 4.5 1.9 2.6 10.5 1.2 1.4 1.2 0.5 1.6 0.5 1 2 3 1 : Emitter 2 : Collector 3 : Base 2.5 2.5 SANYO : FLP Specifications Absolute Maximum Ratings at Ta = 25?C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO 38 V Collector-to-Emitter Voltage VCEO 18 V Emitter-to-Base Voltage VEBO 3 V Collector Current IC 0.75 A Collector Current (Pulse) ICP 1.2 A Base Current IB 150 mA Collector Dissipation PC 1.5 W Junction Temperature Tj 150 ?C Storage Temperature Tstg –55 to +150 ?C Electrical Characteristics at Ta = 25?C Ratings Parameter Symbol Conditi
Keywords
2sc4910 Datasheet, Design, MOSFET, Power
2sc4910 RoHS, Compliant, Service, Triacs, Semiconductor
2sc4910 Database, Innovation, IC, Electricity
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