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POWER MOSFET, IGBT, IC, TRIACS DATABASE. Electronic Supply. INNOVATION CATALOG

2sc4997

2SC4997 / 2SC4998 Transistors High-frequency Amplifier Transistor, RF switching (10V, 0.1A) 2SC4997 / 2SC4998 Features External dimensions (Units : mm) 1) High transition frequency. (fT=240MHz) 2) High hFE. 2SC4997 (1) (2) (3) 0.8 Absolute maximum ratings (Ta=25°C) 1.6 Parameter Symbol Limits Unit Collector-base voltage VCBO 15 V 0.1Min. Collector-emitter voltage VCEO 10 V ( ) (1) Emitter Source Emitter-base voltage VEBO 5 V ( ) ROHM : EMT3 (2) Base Gate Collector current IC 0.1 A ( ) EIAJ : SC-75A (3) Collector Drain 2SC4997 0.15 Collector power PC W dissipation 2SC4998 0.2 Junction temperature Tj 150 ?C Storage temperature Tstg -55~+150 ?C 2SC4998 Packaging specifications and hFE 1.25 Type 2SC4997 2SC4998 2.1 Package EMT3 UMT3 hFE 560~2700 560~27

Keywords

 2sc4997 Datasheet, Design, MOSFET, Power

 2sc4997 RoHS, Compliant, Service, Triacs, Semiconductor

 2sc4997 Database, Innovation, IC, Electricity

 

 
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