View 2sc5026 e datasheet:
POWER MOSFET, IGBT, IC, TRIACS DATABASE. Electronic Supply. INNOVATION CATALOG
Transistor 2SC5026 Silicon NPN epitaxial planer type For low-frequency output amplification Unit: mm Complementary to 2SA1890 1.5± 0.1 4.5± 0.1 1.6± 0.2 Features Low collector to emitter saturation voltage VCE(sat). High collector to emitter voltage VCEO. 45° Mini Power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the maga- 0.4± 0.08 zine packing. 0.4± 0.04 0.5± 0.08 1.5± 0.1 3.0± 0.15 3 2 1 Absolute Maximum Ratings (Ta=25?C) Parameter Symbol Ratings Unit marking Collector to base voltage VCBO 80 V Collector to emitter voltage VCEO 80 V Emitter to base voltage VEBO 5 V 1:Base 2:Collector EIAJ:SC–62 Peak collector current ICP 1.5 A 3:Emitter Mini Power Type Package Collector current IC 1 A Collector
Keywords
2sc5026 e Datasheet, Design, MOSFET, Power
2sc5026 e RoHS, Compliant, Service, Triacs, Semiconductor
2sc5026 e Database, Innovation, IC, Electricity
