View 2sc5190 e datasheet:

Transistor 2SC5190 Silicon NPN epitaxial planer type For low-voltage high-frequency amplification Unit: mm 2.1± 0.1 0.425 1.25± 0.1 0.425 Features High transition frequency fT. Small collector output capacitance Cob. 1 S-Mini type package, allowing downsizing of the equipment and 3 automatic insertion through the tape packing and the magazine 2 packing. Absolute Maximum Ratings (Ta=25?C) Parameter Symbol Ratings Unit Collector to base voltage VCBO 9 V 0.2± 0.1 Collector to emitter voltage VCEO 6 V Emitter to base voltage VEBO 2 V 1:Base 2:Emitter EIAJ:SC–70 Collector current IC 30 mA 3:Collector S–Mini Type Package Collector power dissipation PC 150 mW Junction temperature Tj 150 ?C Marking symbol : 3Y Storage temperature Tstg –55 ~ +150 ?C Electrical Character