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POWER MOSFET, IGBT, IC, TRIACS DATABASE. Electronic Supply. INNOVATION CATALOG

2sc5230

Ordering number:EN5046 NPN Epitaxial Planar Silicon Transistor 2SC5230 VHF to UHF Wide-Band Low-Noise Amplifier Applications Features Package Dimensions · Low noise : NF=1.0dB typ (f=1GHz). unit:mm 2 · High gain : ? S21e? =10.5dB typ (f=1GHz). 2004B · High cutoff frequency : fT=6.5GHz typ. [2SC5230] 5.0 4.0 4.0 0.45 0.5 0.44 0.45 1 : Base 2 : Emitter 3 : Collector 1 2 3 SANYO : NP JEDEC : TO-92 EIAJ : SC-43 1.3 1.3 Specifications Absolute Maximum Ratings at Ta = 25?C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO 20 V Collector-to-Emitter Voltage VCEO 10 V Emitter-to-Base Voltage VEBO 2 V Collector Current IC 70 mA Collector Dissipation PC 400 mW Junction Temperature Tj 150 ?C Storage Temperature Tstg –55 to +150 ?C Electri

Keywords

 2sc5230 Datasheet, Design, MOSFET, Power

 2sc5230 RoHS, Compliant, Service, Triacs, Semiconductor

 2sc5230 Database, Innovation, IC, Electricity

 

 
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