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2sc5232

2SC5232 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC5232 General Purpose Amplifier Applications Unit: mm Switching and Muting Switch Application • Low saturation voltage: VCE (sat) (1) = 15 mV (typ.) @I = 10 mA/I = 0.5 mA C B • Large collector current: I = 500 mA (max) C Maximum Ratings (Ta = = 25°C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 15 V Collector-emitter voltage VCEO 12 V Emitter-base voltage VEBO 5 V Collector current IC 500 mA Base current IB 50 mA Collector power dissipation PC 150 mW Junction temperature Tj 125 °C JEDEC TO-236MOD Storage temperature range Tstg -55~125 °C JEITA SC-59 TOSHIBA 2-3F1A Marking Weight: 0.012 g (typ.) 1 2003-03-27 2SC5232 Electrical Characteristics (Ta = = 25

Keywords

 2sc5232 Datasheet, Design, MOSFET, Power

 2sc5232 RoHS, Compliant, Service, Triacs, Semiconductor

 2sc5232 Database, Innovation, IC, Electricity

 

 
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