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POWER MOSFET, IGBT, IC, TRIACS DATABASE. Electronic Supply. INNOVATION CATALOG

2sc5254

2SC5254 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5254 VHF~UHF Band Low Noise Amplifier Applications Unit: mm • Low noise figure: NF = 1.5dB (f = 2 GHz) • High gain: Gain = 8.5dB (f = 2 GHz) Maximum Ratings (Ta = = 25°C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 15 V Collector-emitter voltage VCEO 7 V Emitter-base voltage VEBO 1.5 V Collector current IC 40 mA Base current IB 20 mA Collector power dissipation PC 150 mW Junction temperature Tj 125 °C Storage temperature range Tstg -55~125 °C JEDEC ? JEITA ? TOSHIBA 2-3F1A Weight: 0.012 g (typ.) Microwave Characteristics (Ta = = 25°C) = = Characteristics Symbol Test Condition Min Typ. Max Unit Transition frequency fT VCE = 5 V, IC = 20 mA 9 12 ? GHz ?S21e?2 (1)

Keywords

 2sc5254 Datasheet, Design, MOSFET, Power

 2sc5254 RoHS, Compliant, Service, Triacs, Semiconductor

 2sc5254 Database, Innovation, IC, Electricity

 

 
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