View 2sc5265 datasheet:

Ordering number:EN5321 NPN Triple Diffused Planar Silicon Transistor 2SC5265 Inverter-controlled Lighting Applications Features Package Dimensions · High breakdown voltage (VCBO=1200V). unit:mm · High reliability (Adoption of HVP process). 2079B · Adoption of MBIT process. [2SC5265] 4.5 10.0 2.8 3.2 0.9 0.7 1.2 0.75 1 : Base 1 2 3 2 : Collector 3 : Emitter 2.55 2.55 SANYO : TO-220FI (LS) Specifications Absolute Maximum Ratings at Ta = 25?C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO 1200 V Collector-to-Emitter Voltage VCEO 600 V Emitter-to-Base Voltage VEBO 9 V Collector Current IC 4 A Collector Current (Pulse) ICP 8 A Collector Dissipation PC 2 W Tc=25?C 30 W Junction Temperature Tj 150 ?C Storage Temperature Tstg –55 to +