View 2sc5265ls datasheet:

Ordering number : ENN5321A 2SC5265LS NPN Triple Diffused Planar Silicon Transistor 2SC5265LS Inverter-Controlled Lighting Applications Features Package Dimensions • High breakdown voltage(VCBO=1200V). unit : mm • High reliability(Adoption of HVP process). 2079D • Adoption of MBIT process. [2SC5265LS] 10.0 4.5 3.2 2.8 0.9 1.2 1.2 0.75 0.7 1 2 3 1 : Base 2 : Collector 3 : Emitter Specifications 2.55 2.55 SANYO : TO-220FI(LS) Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO 1200 V Collector-to-Emitter Voltage VCEO 600 V Emitter-to-Base Voltage VEBO 9 V Collector Current IC 4 A Collector Current (Pulse) ICP 8 A 2 W Collector Dissipation PC Tc=25°C30 W Junction Temperature Tj 150 °C Storage Temperatu