View 2sc5291 datasheet:

Ordering number : ENN5282A 2SC5291 NPN Epitaxial Planar Silicon Transistor 2SC5291 High-Voltage Switching Applications Features Package Dimensions • Adoption of FBET, MBIT processes. unit : mm • Large current capacity. 2084B • Can be provided in taping. [2SC5291] • 9.5mm onboard mounting height. 4.5 1.9 2.6 10.5 1.2 1.4 1.2 0.5 1.6 0.5 1 2 3 1 : Emitter 2 : Collector 3 : Base Specifications 2.5 2.5 SANYO : FLP Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO 180 V Collector-to-Emitter Voltage VCEO 160 V Emitter-to-Base Voltage VEBO 6 V Collector Current IC 1.5 A Collector Current (Pulse) ICP 2.5 A Base Current IB 300 mA Collector Dissipation PC 1.5 W Junction Temperature Tj 150 °C Storage Tempera