View 2sc5298 datasheet:

Ordering number:EN5292 NPN Triple Diffused Planar Silicon Transistor 2SC5298 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions � High speed : tf=100ns typ. unit:mm � High breakdown voltage : VCBO=1500V. 2039D � High reliability (Adoption of HVP process). [2SC5298] � Adoption of MBIT process. 16.0 5.6 3.4 � On-chip damper diode. 3.1 2.8 2.0 2.0 1.0 0.6 1 : Base 1 2 3 2 : Collector 3 : Emitter 5.45 5.45 SANYO : TO-3PML Specifications Absolute Maximum Ratings at Ta = 25?C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO 1500 V Collector-to-Emitter Voltage VCEO 800 V Emitter-to-Base Voltage VEBO 6 V Collector Current IC 10 A Collector Current (Pulse) ICP 25 A 3.0 W Collector Dis