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POWER MOSFET, IGBT, IC, TRIACS DATABASE. Electronic Supply. INNOVATION CATALOG

2sc5638

Ordering number:ENN6466 NPN Triple Diffused Planar Silicon Transistor 2SC5638 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions · High speed (tf=100ns typ). unit:mm · High breakdown voltage (VCBO=1500V). 2174 · High reliability (Adoption of HVP process). [2SC5638] · Adoption of MBIT process. 3.4 5.6 16.0 3.1 2.8 2.0 2.1 0.7 0.9 1 2 3 5.45 1 : Base 2 : Collector 3 : Emitter 5.45 SANYO : TO-3PMLH Specifications Absolute Maximum Ratings at Ta = 25?C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO 1500 V Collector-to-Emitter Voltage VCEO 800 V Emitter-to-Base Voltage VEBO 6 V Collector Current IC 15 A Collector Current (Pulse) ICP 35 A 3 W Collector Dissipation PC Tc=25?C 95 W

Keywords

 2sc5638 Datasheet, Design, MOSFET, Power

 2sc5638 RoHS, Compliant, Service, Triacs, Semiconductor

 2sc5638 Database, Innovation, IC, Electricity

 

 
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